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Press release from Business Wire

TriQuint Signs U.S. Army Agreement to Support GaN Device Development

<p class='bwalignc'> <i>TriQuint's Gallium Nitride Leadership in DARPA Programs Led to Beneficial Joint Development Program with the ARL</i> </p> <p class='bwalignc'> </p>

Monday, April 16, 2012

TriQuint Signs U.S. Army Agreement to Support GaN Device Development08:05 EDT Monday, April 16, 2012 HILLSBORO, Ore. & RICHARDSON, Texas (Business Wire) -- TriQuint Semiconductor, Inc. (NASDAQ: TQNT), a leading RF solutions supplier and technology innovator, today announced that it has signed a Cooperative Research and Development Agreement (CRADA) with the U.S. Army Research Laboratory (ARL) to explore and fabricate new high-frequency and mixed signal integrated circuits (ICs) based on TriQuint gallium nitride (GaN) technology. The CRADA is designed to accelerate new programs supporting communications, radar, electronic warfare and similar applications. The CRADA will give Army researchers dedicated access to TriQuint's development, fabrication and packaging expertise. Researchers from both TriQuint and the ARL will benefit from the new co-development environment. Circuits created as part of the initiative are expected to be based on TriQuint's new E/D (enhancement-depletion mode) GaN technology. The new agreement leverages technology TriQuint created through on-going R&D programs. This GaN process has been utilized in Defense Advanced Research Projects Agency (DARPA) initiatives, including the Nitride Electronic NeXt-Generation (NEXT) program that TriQuint now leads. Through NEXT, TriQuint continues to establish benchmark performance standards for mixed-signal (digital and RF) devices. TriQuint GaN achievements also led to its selection as a prime contractor in the Microscale Power Conversion (MPC) program that is developing ultra-fast, high power DC-DC switch modulator technology for advanced integrated RF amplifiers. TriQuint's role in MPC was recognized by Compound Semiconductor magazine on March 12 with a 2012 CS Industry Award. “Creative partnerships through Cooperative Research and Development Agreements encourage outside businesses and university organizations to share in the discovery of and investment in technologies. In this case, ARL is leveraging industrial fabrication capabilities allowing ARL to maximize its return on investment,” said John Miller, Army Research Laboratory Director. “These advanced IC processes, coupled with ARL's design expertise, could lead to innovations and advancements in both military and consumer applications in communications, radar and electronic warfare.” “TriQuint's gallium nitride research leads the industry. This new CRADA is another example of ways that our work in one program benefits other DoD agencies and service branches. We will provide access to our extensive development capabilities and the ARL will provide designs and test circuits in support of their advanced programs,” said James L. Klein, TriQuint Vice President and General Manager for Defense Products and Foundry Services. TriQuint's new agreement with the ARL is designed to stimulate high performance monolithic microwave integrated circuit (MMIC) development. The ARL's design and testing capabilities will be leveraged with TriQuint's MMIC fabrication, testing and packaging expertise. Both TriQuint and ARL researchers will work towards identifying circuits of mutual interest that have the potential to advance state-of-the-art design programs. TriQuint has been a pioneer in GaN development and research since 1999. TriQuint currently leads multiple GaN process and manufacturing technology programs for DARPA, the US Air Force, Army and Naval laboratories including the Defense Production Act Title III manufacturing enhancement program. TriQuint has also led two other DARPA programs that were part of the Wide Bandgap Semiconductor (WBGS) RF research initiative. TriQuint Gallium Nitride Product Innovation, Honors & Resources:       Heritage Leader in defense and commercial GaN research since 1999 Research Leader in performance and reliability GaN development University Partners Massachusetts Institute of Technology, University of Notre Dame and University of Colorado at Boulder The Global GaN Impact Strategy Analytics recognizes TriQuint's GaN R&D / GaN Product Innovation Active R&D programs DARPA NEXT program for highly complex, high frequency GaN MMICs   Defense Production Act (DPA) Title III program for GaN on SiC; Radar and EW MMICs: Air Force and Navy sponsors   DARPA Microscale Power Conversion program to develop ultra-fast power switch technology and integrate technology into next-generation amplifiers   DARPA Near Junction Thermal Transport (NJTT) GaN program to increase circuit power handling capabilities through enhanced thermal management Recent Honors 2011 ‘Compound Semiconductor' CS Industry Award for DARPA NEXT; 2012 CS Industry Award for DARPA MPC program GaN Products Wide selection of innovative GaN amplifiers, transistors and switches GaN Foundry 0.25-micron GaN on SiC; 100mm wafers; DC-18 GHz applications For more information about TriQuint defense / aerospace products and foundry services, including GaN-based amplifiers, transistors, high-power switches and integrated assembly capabilities, visit us at www.triquint.com/defense, or register to receive product updates and TriQuint's newsletter. FORWARD LOOKING STATEMENTS This TriQuint Semiconductor, Inc. (NASDAQ: TQNT) press release contains forward-looking statements made pursuant to the Safe Harbor provisions of the Private Securities Litigation Reform Act of 1995. Readers are cautioned that forward-looking statements involve risks and uncertainties. The cautionary statements made in this press release should be read as being applicable to all related statements wherever they appear. Statements containing such words as ‘leading', ‘exceptional', ‘high efficiency', ‘key role', ‘leading supplier', or similar terms are considered to contain uncertainty and are forward-looking statements. A number of factors affect TriQuint's operating results and could cause its actual future results to differ materially from any results indicated in this press release or in any other forward-looking statements made by, or on behalf of, TriQuint including, but not limited to: those associated with the unpredictability and volatility of customer acceptance of and demand for our products and technologies, the ability of our production facilities and those of our vendors to meet demand, the ability of our production facilities and those of our vendors to produce products with yields sufficient to maintain profitability, as well as the other “Risk Factors” set forth in TriQuint's most recent 10-Q report filed with the Securities and Exchange Commission. This and other reports can be found on the SEC web site, www.sec.gov. A reader of this release should understand that these and other risks could cause actual results to differ materially from expectations expressed / implied in forward-looking statements. FACTS ABOUT TRIQUINT Founded in 1985, TriQuint Semiconductor (NASDAQ: TQNT) is a leading global provider of innovative RF solutions and foundry services for the world's top communications, defense and aerospace companies. People and organizations around the world need real-time, all-the-time connections; TriQuint products help reduce the cost and increase the performance of connected mobile devices and the networks that deliver critical voice, data and video communications. With the industry's broadest technology portfolio, recognized R&D leadership, and expertise in high-volume manufacturing, TriQuint creates standard and custom products using gallium arsenide (GaAs), gallium nitride (GaN), surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies. The company has ISO9001-certified manufacturing facilities in the U.S., production in Costa Rica, and design centers in North America and Germany. For more information, visit www.triquint.com. TriQuint: Connecting the Digital World to the Global Network®TriQuint Semiconductor, Inc.Media Contact:Mark W. AndrewsStrategic Marketing Communications Mgr.+1 407 884 3404Mobile: +1 407 353 8727mark.andrews@tqs.comorDefense Solutions Marketing:Roger Hall, Defense Products &Foundry Services Marketing Director+1 972 994 8289roger.hall@tqs.com