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Press release from Business Wire

TriQuint Achieves Record GaN Reliability Performance

<p class='bwalignc'> <i><b>TriQuint's New Process Enables More Robust, High-Efficiency RF Devices</b></i> </p>

Monday, November 26, 2012

TriQuint Achieves Record GaN Reliability Performance08:05 EST Monday, November 26, 2012 HILLSBORO, Ore. & RICHARDSON, Texas (Business Wire) -- TriQuint Semiconductor, Inc. (NASDAQ: TQNT), a leading RF products manufacturer and foundry services provider, has achieved record-setting gallium nitride (GaN) circuit reliability that exceeds previous industry standards. TriQuint's new GaN benchmark supports highly-reliable integrated RF solutions that use less power, are compact, and serve wide frequency ranges. Any RF system can benefit from reduced maintenance and longer operational lifetimes arising from increased reliability such as commercial and defense RF infrastructure, broadband communications, first-responder radios and space-based applications. “We're pleased to announce this new GaN reliability milestone,” said James L. Klein, Vice President and GM for Infrastructure and Defense Products. “The achievement supports our foundry services and helps us accelerate product development. We are delivering more products and services than ever before.” TriQuint's TQGaN25 process, qualified to operate up to 40 Volts, has achieved a mean time to failure (MTTF) of greater than 10 million hours* at 200 degrees (C) and greater than 1 million hours* at 225 degrees (C). This reliability milestone was achieved with TriQuint's newly-released Generation II 0.25-micron GaN on SiC (silicon carbide) process utilized for GaN product solutions and Foundry Services. TriQuint achieved its new GaN performance through in-house development programs. This new reliability also supports objectives of TriQuint's Defense Production Act (DPA) Title III contract that is funded by the Department of Defense Tri-Services laboratories including the U.S. Air Force, Army and Navy. TriQuint is also reducing manufacturing cycle times and increasing yields while making other GaN enhancements that work hand-in-hand with DPA Title III goals. All manufacturing enhancements are designed to support greater affordability of next-generation AESA (active electronically scanned array) radars, new EW systems and commercial applications. Defense systems currently in technology development phases have production planned for 2016-2020. TriQuint announced the reliability of its TQGaN25 process in connection with the Defense Manufacturing Conference (DMC), November 26-29 in Orlando, Florida. Visit TriQuint in Booth 328 or contact TriQuint to schedule a meeting about GaN, gallium arsenide (GaAs), or advanced acoustic filter technology including SAW and BAW solutions for commercial and defense systems.           TriQuint Gallium Nitride Product Innovation, Honors and Resources   Heritage Leader in defense and commercial GaN research since 1999   Research Leader in performance and reliability GaN development   University Partners University of Bristol, Massachusetts Institute of Technology, University of Notre Dame and University of Colorado at Boulder   The Global GaN Impact Strategy Analytics recognizes TriQuint's GaN R&D / GaN Product Innovation   Active R&D programs DARPA NEXT program for highly complex, high frequency GaN MMICs   Defense Production Act (DPA) Title III program for GaN on SiC; Radar and EW MMICs: Air Force and Navy sponsors   DARPA Microscale Power Conversion program to develop ultra-fast GaN power switch technology that is integrated into next-generation amplifiers   DARPA Near Junction Thermal Transport (NJTT) GaN program to increase circuit power handling capabilities through enhanced thermal management   Army Research Laboratory (ARL) Cooperative Research and Development Agreement (CRADA) to jointly develop advanced GaN circuits   Recent Honors 2011 ‘Compound Semiconductor' CS Industry Award for DARPA NEXT; 2012 CS Industry Award for DARPA MPC program; other awards   GaN Products Wide selection of innovative GaN amplifiers, transistors and switches   GaN Foundry 0.25-micron GaN on SiC; 100mm wafers; DC-18 GHz applications   For information about GaN-based amplifiers, transistors, high-power switches, integrated assembly capabilities and DoD accredited Trusted (Category 1A) Foundry Services including packaging, post-processing and test, contact TriQuint Business Development or visit www.triquint.com/defense. Register to receive product updates and TriQuint's newsletter. FORWARD LOOKING STATEMENTS This TriQuint Semiconductor, Inc. (NASDAQ: TQNT) press release contains forward-looking statements made pursuant to the Safe Harbor provisions of the Private Securities Litigation Reform Act of 1995. Readers are cautioned that forward-looking statements involve risks and uncertainties. The cautionary statements made in this press release should be read as being applicable to all related statements wherever they appear. Statements containing such words as ‘leading', ‘exceptional', ‘high efficiency', ‘key role', ‘leading supplier', or similar terms are considered to contain uncertainty and are forward-looking statements. A number of factors affect TriQuint's operating results and could cause its actual future results to differ materially from any results indicated in this press release or in any other forward-looking statements made by, or on behalf of, TriQuint including, but not limited to: those associated with the unpredictability and volatility of customer acceptance of and demand for our products and technologies, the ability of our production facilities and those of our vendors to meet demand, the ability of our production facilities and those of our vendors to produce products with yields sufficient to maintain profitability, as well as the other “Risk Factors” set forth in TriQuint's most recent 10-Q report filed with the Securities and Exchange Commission. This and other reports can be found on the SEC web site, www.sec.gov. A reader of this release should understand that these and other risks could cause actual results to differ materially from expectations expressed / implied in forward-looking statements. FACTS ABOUT TRIQUINT Founded in 1985, TriQuint Semiconductor (NASDAQ: TQNT) is a leading global provider of innovative RF solutions and foundry services for the world's top communications, defense and aerospace companies. People and organizations around the world need real-time, all-the-time connections; TriQuint products help reduce the cost and increase the performance of connected mobile devices and the networks that deliver critical voice, data and video communications. With the industry's broadest technology portfolio, recognized R&D leadership, and expertise in high-volume manufacturing, TriQuint creates standard and custom products using gallium arsenide (GaAs), gallium nitride (GaN), surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies. The company has ISO9001-certified manufacturing facilities in the U.S., production in Costa Rica, and design centers in North America and Germany. For more information, visit www.triquint.com. TriQuint: Connecting the Digital World to the Global Network® *MTTF ratings are based on device junction temperatures of 200 degrees and 225 degrees Centigrade (C). TriQuint Semiconductor, Inc.Media Contact:Mark W. AndrewsTriQuint Strategic Marketing ManagerOffice: +1 407 884 3404Mobile: +1 407 353 8727E-mail: mandrews@tqs.comorInfrastructure & Defense Products:Douglas Reep, Sr. Director: R&D,Strategy and Business DevelopmentTel: +1 972 994 8323E-mail: douglas.reep@tqs.com